Fundamentals of Modern VLSI Devices (inbunden)
Format
Inbunden (Hardback)
Språk
Engelska
Antal sidor
622
Utgivningsdatum
2021-12-02
Upplaga
3
Förlag
Cambridge University Press
Medarbetare
Ning, Tak H.
Illustratör/Fotograf
Worked examples or Exercises
Illustrationer
Worked examples or Exercises
Dimensioner
249 x 175 x 30 mm
Vikt
1317 g
Antal komponenter
1
ISBN
9781108480024

Fundamentals of Modern VLSI Devices

Inbunden,  Engelska, 2021-12-02
788
Billigast på PriceRunner
  • Skickas från oss inom 2-5 vardagar.
  • Fri frakt över 249 kr för privatkunder i Sverige.
Finns även som
Visa alla 1 format & utgåvor
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Visa hela texten

Passar bra ihop

  1. Fundamentals of Modern VLSI Devices
  2. +
  3. The Anxious Generation

De som köpt den här boken har ofta också köpt The Anxious Generation av Jonathan Haidt (inbunden).

Köp båda 2 för 1077 kr

Kundrecensioner

Har du läst boken? Sätt ditt betyg »

Övrig information

Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow. Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.

Innehållsförteckning

Prefaces; Physical constants and unit conversions; List of symbols; 1. Introduction; 2. Basic device physics; 3. p-n junctions and metal-silicon contacts; 4. MOS capacitors; 5. MOSFETs: long channel; 6. MOSFETs: short channel; 7. Silicon-on-insulator and double-gate MOSFETs; 8. CMOS performance factors; 9. Bipolar devices; 10. Bipolar device design; 11. Bipolar performance factors; 12. Memory devices; References; Index.