Synthesis &; Characterization of Nanodot Embedded MOS-C for the NVM (häftad)
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Format
Häftad (Paperback / softback)
Språk
Engelska
Antal sidor
56
Utgivningsdatum
2015-01-12
Förlag
LAP Lambert Academic Publishing
Medarbetare
Mukhopadhyay Sabyasachi
Illustrationer
black & white illustrations
Dimensioner
229 x 152 x 3 mm
Vikt
95 g
Antal komponenter
1
Komponenter
Paperback
ISBN
9783659670398
Synthesis &; Characterization of Nanodot Embedded MOS-C for the NVM (häftad)

Synthesis &; Characterization of Nanodot Embedded MOS-C for the NVM

An Innovative Approach in Nano-Technology

Häftad Engelska, 2015-01-12
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Achieving lower dimensional electronic device in today's world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles.
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